Nanoislands on silicon enable switchable topological textures for new electronic applications
Ferroelectrics at the nanoscale exhibit a wealth of polar and sometimes swirling (chiral) electromagnetic textures that not ...
Nature6d
Noise Modeling in Semiconductor Field-Effect Transistors
As the dimensions of these transistors decrease to the nanometer ... providing insights that could enhance the performance of nanoscale MOSFETs[1]. Another important aspect of noise modeling ...
Study demonstrates integration of 1,024 silicon quantum dots with on-chip electronics all operating at low temperatures
Quantum computers have the potential of outperforming classical computers on some optimization tasks. Yet scaling up quantum ...
AZoNano8d
Chiral Textures in Ferroelectric Nanoislands
Chiral topological textures in BaTiO3 nanoislands demonstrate potential for electrical manipulation, enhancing prospects for ...
Foreign Affairs8d
The Race to Lead the Quantum Future
Once confined to the province of abstract theory, quantum computing seeks to use operations based on quantum mechanics to ...
Semiconductor Engineering10d
Research Bits: Jan. 20
Researchers from the University of Utah and the University of California Irvine discovered a new type of spin-orbit torque ...
RF Globalnet8d
Revolutionizing Electronic Device Manufacturing With Self-Assembling Electronics
Recent advancements in self-assembling electronics have demonstrated the potential to revolutionize the manufacturing of ...
IEEE20d
Surround Gate Nanoscale Air-Channel Transistors via Ion Implantation Process for Amplification Applications
Abstract: Nanoscale air-channel transistors (NACTs) are promising candidates for high-frequency, high-speed, and radiation-resistant applications. However, in existing three-terminal NACTs, the gate ...
C&EN9d
Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking Layer
Department of Electrical Engineering and Computer Science (EECS), Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea Department of Electrical Engineering and ...
IEEE15d
TCAD Study of Giant Negative Differential Resistance in Nanoscale Ferroelectric Field-Effect Transistors
field-effect transistors (FETs). A significant challenge for the development of NDR devices is the need for them to be compatible with established integrated circuit (IC) manufacturing processes while ...