A detail of the cover image for AEM created by University of Arkansas. The GeSn quantum well with Ge barriers sits in the background, while the GeSn quantum well with ordered SiGeSn barriers is in the ...
Molecular beam epitaxy (MBE) is a precision epitaxial growth technique that permits atomic‐scale tailoring of semiconductor structures. By directing beams of elemental or compound sources onto heated ...
A small, counterintuitive tweak to advanced materials can improve how quantum computers hand off information inside their systems, making them more efficient, reliable and scalable. To visualize a ...
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